The CoolSiC MOSFETs provide smaller system sizes, greater power densities, and dependable operation in extremely high temperatures since they have superior switching performance and reduced resistance. Infineon’s most recent line of 1200 V CoolSiC MOSFETs are offered in TO263-7 for automotive applications. The automotive-grade silicon carbide (SiC) MOSFET generation offers excellent power density and efficiency in onboard charging (OBC) and DC-DC applications, allows for bi-directional charging, and significantly reduces system cost.
The 1200 V CoolSiC family member performs best in class because switching losses are 25% lower than in the previous generation. This improvement in switching behavior allows for high-frequency operation, which leads to smaller systems and higher power densities. High Gate-source threshold voltage (VGS(th)) and a very low Crss/Ciss ratio enable reliable turn-off at VGS=0 V without the risk of parasitic turn-ons. This makes unipolar driving possible, which reduces the system’s expense and complexity. Another feature of the new generation that reduces conductive losses over the full temperature range of -55°C to 175°C is a low on resistance (RDS(on)). The improved diffusion soldering chip mount technology (.XT technology), which lowers the SiC MOSFET junction temperature by 25% compared to the previous generation, significantly improves the package’s thermal performance. The MOSFET’s 5.89 mm creepage distance also meets the requirements of an 800 V system and requires the least amount of coating work. Infineon offers a variety of RDS(on) options, including the only 9 m kind in the TO263-7 package that is currently available, to fulfill the requirements of diverse applications.